掺杂(分类号：TN305.3) - 暨南大学图书馆

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分类依据：离子注入技术入此。
	二氧化钛半导体光催化材料离子掺杂 0 索取号：TN305.3/20071 作者：陈建华、龚竹青、出版社：北京 : 科学出版社, 2006	Heavily doped semiconductors 0 索取号：TN305.3/E701 作者：Fistul§、 V. I. (Viktor Il§ich)、 1927-、出版社：New York : Plenum Press, 1969.
	Ion implantation of semiconductors 0 索取号：TN305.3/E801 作者：Carter、 G. (George)、 1934-、Grant、 W. A. (William Alexander)、 1941-、出版社：London : E. Arnold, 1976.	Ion implantation 0 索取号：TN305.3/E803 作者：出版社：London Amsterdam, North-Holland Pub. Co.; New York, American Elsevier, 1973.
	Ion implantation, sputtering and their applications 0 索取号：TN305.3/E802 作者：Townsend、 P. D. (Peter David)、Kelly、 J. C. (John Clive)、 joint author.、Hartley、 N. E. W.、 joint author.、出版社：London ; New York : Academic Press, 1976.	Impurity doping processes in silicon 0 索取号：TN305.3/E901 作者：出版社：Amsterdam ; New York : North-Holland Pub. Co. ; New York, N.Y. : Sole distributors for the USA and Canada, Elsevier North-Holland, 1981.
	Ion implantation in semiconductors : science and technology : [proceedings of the fourth International Conference on Ion Implantation in Semiconductors and Other Materials, held at the Osaka Chamber of Commerce and Industry, August 1974] 0 索取号：TN305.3-53/E801/4 作者：International Conference on Ion Implantation in Semiconductors and Other Materials (4th : 1974 : Osaka)、Namba、 Susumu、 1928-、出版社：New York : Plenum Press, [1975]	Ion Implantation in semiconductors, 1976 0 索取号：TN305.3-53/E801/5 作者：International Conference on Ion Implantation in Semiconductors and Other Materials (5th : 1976 : Boulder、 Colo.)、Chernow、 Fred.、Borders、 James A.、Brice、 David K.、出版社：New York : Plenum Press, c1977.

分类依据：离子注入技术入此。
	二氧化钛半导体光催化材料离子掺杂 0 索取号：TN305.3/20071 作者：陈建华、龚竹青、出版社：北京 : 科学出版社, 2006	Heavily doped semiconductors 0 索取号：TN305.3/E701 作者：Fistul§、 V. I. (Viktor Il§ich)、 1927-、出版社：New York : Plenum Press, 1969.
	Ion implantation of semiconductors 0 索取号：TN305.3/E801 作者：Carter、 G. (George)、 1934-、Grant、 W. A. (William Alexander)、 1941-、出版社：London : E. Arnold, 1976.	Ion implantation 0 索取号：TN305.3/E803 作者：出版社：London Amsterdam, North-Holland Pub. Co.; New York, American Elsevier, 1973.
	Ion implantation, sputtering and their applications 0 索取号：TN305.3/E802 作者：Townsend、 P. D. (Peter David)、Kelly、 J. C. (John Clive)、 joint author.、Hartley、 N. E. W.、 joint author.、出版社：London ; New York : Academic Press, 1976.	Impurity doping processes in silicon 0 索取号：TN305.3/E901 作者：出版社：Amsterdam ; New York : North-Holland Pub. Co. ; New York, N.Y. : Sole distributors for the USA and Canada, Elsevier North-Holland, 1981.
	Ion implantation in semiconductors : science and technology : [proceedings of the fourth International Conference on Ion Implantation in Semiconductors and Other Materials, held at the Osaka Chamber of Commerce and Industry, August 1974] 0 索取号：TN305.3-53/E801/4 作者：International Conference on Ion Implantation in Semiconductors and Other Materials (4th : 1974 : Osaka)、Namba、 Susumu、 1928-、出版社：New York : Plenum Press, [1975]	Ion Implantation in semiconductors, 1976 0 索取号：TN305.3-53/E801/5 作者：International Conference on Ion Implantation in Semiconductors and Other Materials (5th : 1976 : Boulder、 Colo.)、Chernow、 Fred.、Borders、 James A.、Brice、 David K.、出版社：New York : Plenum Press, c1977.